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| InGaAs-PIN/Preamp Receiver FEATURES * * * * Data rate up to 2.5Gb/s -23dBm typ. sensitivity 30m active area PIN chip with GaAs pre-amplifier Small co-axial package with multi-mode fiber FRM3Z231KT/LT KT APPLICATIONS * High bit rate short haul optical transmission systems operating at 2.5Gb/s DESCRIPTION These PIN preamplifiers use an InGaAs PIN chip with GaAs IC preamplifier. The KT package is designed for a horizontal PC board mount. The LT package is secured by a vertical flange. Each package is connected with multi-mode fiber by Nd: YAG welding. The detector preamplifier is DC coupled and has a low electrical output when the PIN is illuminated. These devices are in compliance with ITU-T Recommendations and meet Bellcore Requirements. LT Edition 1.0 March 1999 1 FRM3Z231KT/LT Parameter Storage Temperature Operating Temperature Supply Voltage PIN Reverse Voltage PIN Reverse Current Symbol Tstg Top Vss VR IR (Note 1) InGaAs-PIN/Preamp Receiver ABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) Ratings -40 to +85 -40 to +85 -7 to 0 0 to 20 2.0 Unit C C V V mA OPTICAL & ELECTRICAL CHARACTERISTICS (Ta=-40 to +85C, =1,310/1,550nm, Vss=-5.2V, VR=5V, unless otherwise specified) Parameter PIN Responsivity AC Transimpedance Symbol R15 R13 Zt Test Conditions 1,550nm, M=1 1,310nm, M=1 AC-coupled, f=100MHz, RL=50, Pin <-20dBm AC-Coupled, RL=50, Pin <-27dBm, -3dBm from 1MHz AC-Coupled, RL=50, Average within BW Ta=25C, 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10 Ta=-40 to +85C Ta=-40 to +85C 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10 Ta=-40 to +85C (Note 2) Reverse Voltage Power Supply Current Power Supply Voltage VR Iss Vss Min. 0.80 0.80 400 Limits Typ. 0.85 0.85 600 Max. Unit A/W A/W Bandwidth BW 1.8 2.0 - GHz Equivalent Input Noise Current Density in - 6.5 -23 8 -22 pA/ Hz dBm Sensitivity Pr 0 -22 - -21 - dBm dBm Maximum Overload Po -3 5 -5.46 -5.2 20 40 -4.94 dBm V mA V Note: (1) CW condition (2) Maximum Input Optical Power, Pmax is defined as the optical power when the variation of F.W.H.M. of the output waveform is less than 10% compared with that of the low input optical power level. (3) Optical characteristics are specified on the condition that single mode fiber is used as the optical source for testing. (4) No data is available for either device. Edition 1.0 March 1999 2 InGaAs-PIN/Preamp Receiver Fig. 1 Output Characteristics 0.7 Tc = 25C Vss=-5.2V 0.6 AC-Coupled RL=50 0.5 100Mb/s Duty 50% Mark density 50% 0.4 0.3 0.2 0.1 FRM3Z231KT/LT Fig. 2 Relative Frequency Response Output Voltage Peak, Vpp(mV) Relative Response (3dB/div) Zt ~ 600 Ta = 25C Vss=-5.2V AC-Coupled RL=50 Pin=-30dBm = 1,310/1,550nm 1 10 100 1000 Frequency, f (MHz) 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Fig.4 Eye Diagram with a 1,310nm, 2.5Gb/s NRZ, 223-1 PRBS incident signal Input optical wave form with Bessel filter Average Photocurrent, Ip.ave (mA) Fig.3 Equivalent Input Noise Current Density Relative Input Noise Current Density, in (pA/sqr. Hz) 10 5 Tc = 25C Vss=-5.2V AC-Coupled RL=50 0 0 1.0 Frequency, f (GHz) 2.0 Equivalent output wave form at Pin=-22dBm, Tc=25C, M=optimum 100ps/div Edition 1.0 March 1999 3 FRM3Z231KT/LT Fig.5 Bit Error Rate =1,310/1,550nm 2.5Gb/s, NRZ Vss=-5.2V VR=5V InGaAs-PIN/Preamp Receiver 10-4 Bit Error Rate 10-6 Ta=+25C 10-8 -40C 10-10 10-12 +85C -30 -25 -20 Received Optical Power (dBm) "KT" PACKAGE GND UNIT: mm 2-C1.5 VR VSS 14.00.15 17.00.2 8.40.2 O0.90.1 4-O0.450.05 OUT O6.0 MAX P.C.D. 2.00.2 P.C.D. 4.00.2 2.50.1 4.4 MAX 10.0 MIN 32.0 MAX O7.2 MAX GND VR 2.00.1 4.20.2 1000 MIN VSS 8.40.2 OUT "LT" PACKAGE GND VR VSS VR UNIT: mm VSS 14.00.15 17.00.2 O0.9 P.C.D. 2.00.2 4-O0.450.05 O6.0 MAX P.C.D. 4.00.2 OUT 7.6 MAX 1.00.1 2.50.1 O7.2 MAX OUT GND 10.0 MIN 32.0 MAX 1000 MIN Edition 1.0 March 1999 4 InGaAs-PIN/Preamp Receiver For further information please contact: FRM3Z231KT/LT FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 55 Schanck Road, Suite A-2 Freehold, NJ 07728-2964, U.S.A. Phone: (732) 303-0282 FAX: (732) 431-3393 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: * Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. www.fcsi.fujitsu.com FUJITSU MIKROELECTRONIK GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ, UK Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 FUJITSU QUANTUM DEVICES, LTD. Asia & Japan 2-7-1, Nishi Shinjuku Shinjuku-ku, Tokyo 163-0721 Japan Phone: 3-5322-3356 FAX: 3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0199M200 Edition 1.0 March 1999 5 |
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